New method of modelling a multipeak resonant tunnelling diode
New method of modelling a multipeak resonant tunnelling diode
- Author(s): C. Y. Huang ; J. E. Morris ; Y. K. Su ; T. H. Kuo
- DOI: 10.1049/el:19940636
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- Author(s): C. Y. Huang 1 ; J. E. Morris 1 ; Y. K. Su 2 ; T. H. Kuo 2
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View affiliations
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Affiliations:
1: Department of Electrical Engineering, State University of New York at Binghamton, Binghamton, USA
2: Department of Electrical Engineering, National Cheng Kung University, Tainan, Peoples' Republic of China
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Affiliations:
1: Department of Electrical Engineering, State University of New York at Binghamton, Binghamton, USA
- Source:
Volume 30, Issue 12,
9 June 1994,
p.
1012 – 1013
DOI: 10.1049/el:19940636 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.
Inspec keywords: resonant tunnelling devices; tunnel diodes; equivalent circuits; semiconductor device models
Other keywords:
Subjects: Junction and barrier diodes; Semiconductor device modelling, equivalent circuits, design and testing
References
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- R. C. Potter , A. A. Lakhani , H. Hier . Three and six logic states by the vertical integration of InAlAs/InGaAsresonant tunnelling structures. J. Appl. Phys. , 3735 - 3736
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- Kuo, T. H.: `Analog-to-digital converter using resonant tunnelling diode', 1990, PhD, .
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- A. C. Seabaugh , Y. C. Kao , H. T. Yuan . Nine-state resonant tunnelling diode memory. IEEE Electron Device Lett. , 9 , 479 - 481
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- Z. X. Yan , M. J. Deen . A new resonant-tunnel diode-based multivalued circuit using a MESFETdepletion load. IEEE J. Solid-State Circuits , 8 , 1198 - 1202
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