Low noise AlInAs/InGaAs HEMT using WSi ohmic contact
Low noise AlInAs/InGaAs HEMT using WSi ohmic contact
- Author(s): N. Yoshida ; Y. Yamamoto ; K. Katoh ; H. Minami ; T. Kitano ; H. Takano ; T. Sonoda ; S. Takamiya ; S. Mitsui
- DOI: 10.1049/el:19940633
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- Author(s): N. Yoshida 1 ; Y. Yamamoto 1 ; K. Katoh 1 ; H. Minami 1 ; T. Kitano 1 ; H. Takano 1 ; T. Sonoda 1 ; S. Takamiya 1 ; S. Mitsui 1
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View affiliations
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Affiliations:
1: Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Hyogo, Japan
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Affiliations:
1: Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Hyogo, Japan
- Source:
Volume 30, Issue 12,
9 June 1994,
p.
1009 – 1010
DOI: 10.1049/el:19940633 , Print ISSN 0013-5194, Online ISSN 1350-911X
A 0.15 µm T-shaped gate AlInAs/InGaAs HEMT with excellent RF performance has been developed using refractory WSi non-alloyed ohmic contacts. An extremely low noise figure of 0.8 dB with an associated gain of 8.0 dB has been achieved at 40 GHz for an SiON-passivated device.
Inspec keywords: gallium arsenide; aluminium compounds; III-V semiconductors; ohmic contacts; high electron mobility transistors; tungsten compounds; indium compounds; solid-state microwave devices; semiconductor device noise
Other keywords:
Subjects: Solid-state microwave circuits and devices; Other field effect devices; Semiconductor-metal interfaces
References
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- Wang, H., Lai, R., Chen, T.H., Chow, P.D., Velebir, J., Tan, K.L., Streit, D.C., Liu, P.H., Ponchak, G.: `A monolithic W-band three-stage LNA using 0.1 µmInAlAs/InGaAs/InP HEMT technology', 1993 IEEE MTT-S Dig., p. 519–522.
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- Duh, K.H.G., Liu, S.M.J., Kao, M.Y., Wang, S.C., Tang, O.S.A., Ho, P., Chao, P.C., Smith, P.M.: `Advanced millimeter-wave InP HEMT MMIC's', Proc. 3rd Int. Conf. Indium Phosphide and Related Matter, 1993, p. 493–496.
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- Yoshida, N., Yamamoto, Y., Takano, H., Sonoda, T., Takamiya, S., Mitsui, S.: `Study of ohmic contacts to AlInAs/InGaAs HEMT's', GaAs Rel. Workshop, October 1993, San Jose, CA, USA.
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- U.K. Mishra , J.F. Jensen , A.S. Brown , M.A. Thompson , L.M. Jelloian , R.S. Beaubien . Ultra-high-speed digital circuit performance in 0.2 µm gate-lengthAlInAs/GaInAs HEMT technology. IEEE Electron. Device Lett. , 482 - 484
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