InGaAsP MQW electroabsorption modulators with compressive strain in the wells and tensile strain in the barriers provide easier escape of photogenerated holes and operate at higher intensities before suffering saturation. Hole escape from wells is enhanced by a reduced energy difference between heavy-hole states in the well and light-hole states in the barrier.
References
-
-
1)
-
Thrush, E.J., Glew, R.W., Greene, P.D., Gibbon, M.A., Armistead, C.J., Smith, A.D., Briggs, A.T.R., Scarrott, K., Czajkowski, I.K., Jones, C.J., Patel, B.L.: `The growth of 1550 nm integrated laser/modulator structures by MOCVD', Proc. Int. Conf. InP Rel. Mat., 1994, Santa Barbara, to be published.
-
2)
-
E. Madelung
.
(1991)
Data in science and technology: Semiconductors, group IV elements, andIII-V compounds.
-
3)
-
T.H. Wood ,
J.Z. Pastalan ,
C.A. Burrus ,
B.C. Johnson ,
B.I. Miller ,
J.L. Demiguel ,
U. Koren ,
M.G. Young
.
Electric field screening by photogenerated holes in MQWs: A new mechanismfor absorption saturation.
Appl. Phys. Lett.
,
1081 -
1083
-
4)
-
T.H. Wood ,
T.Y. Chang ,
J.Z. Pastalan ,
C.A. Burrus ,
N.J. Sauer ,
B.C. Johnson
.
Increased optical saturation intensities in GaInAs multiple quantum wellsby the use of AlGaInAs barriers.
Electron. Lett.
,
257 -
259
-
5)
-
M.P.C.M. Krijn
.
Heterojunction band offsets and effective masses in III-V quaternaryalloys.
Semicond. Sci. Technol.
,
27 -
32
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