Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A low-power mask-programmable 4 Kbit read-only memory with 300 ps access time is reported. The circuit is implemented in AlGaAs/GaAs HBT technology based on 1.4 µm emitter width. Power dissipation for the circuit is less than 1.2 W, which has been minimised through the use of capacitively-coupled active pull-down circuitry.

References

    1. 1)
      • M.F. Chang , P.M. Asbeck . III-V heterojunction bipolar transistors for high-speed applications. Int. J. High Speed Electronics , 245 - 301
    2. 2)
      • J. Tierney , C.M. Rader , B. Gold . A digital frequency synthesizer. IEEE Trans. , 48 - 57
    3. 3)
      • Chun, J., Eden, R., Fiedler, A., Kang, D., Yeung, L.: `A 1.2ns GaAs 4K read-only memory', GaAs IC Symp., 1988, p. 83–86.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19940532
Loading

Related content

content/journals/10.1049/el_19940532
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address