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300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

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A low-power mask-programmable 4 Kbit read-only memory with 300 ps access time is reported. The circuit is implemented in AlGaAs/GaAs HBT technology based on 1.4 µm emitter width. Power dissipation for the circuit is less than 1.2 W, which has been minimised through the use of capacitively-coupled active pull-down circuitry.

References

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      • J. Tierney , C.M. Rader , B. Gold . A digital frequency synthesizer. IEEE Trans. , 48 - 57
    2. 2)
      • Chun, J., Eden, R., Fiedler, A., Kang, D., Yeung, L.: `A 1.2ns GaAs 4K read-only memory', GaAs IC Symp., 1988, p. 83–86.
    3. 3)
      • M.F. Chang , P.M. Asbeck . III-V heterojunction bipolar transistors for high-speed applications. Int. J. High Speed Electronics , 245 - 301
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19940532
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