300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology

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A low-power mask-programmable 4 Kbit read-only memory with 300 ps access time is reported. The circuit is implemented in AlGaAs/GaAs HBT technology based on 1.4 µm emitter width. Power dissipation for the circuit is less than 1.2 W, which has been minimised through the use of capacitively-coupled active pull-down circuitry.


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