Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers

Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers

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The authors fabricated lateral pn junctions in AlGaInP by alternate doping on a stepped substrate composed of (100) and (411)A faces with Zn and Se. It was found that the alternately-doped area on the (100) face becomes a uniform n-type conduction region; this is attributed to carrier depletion in lightly Zn-doped regions. The alternately-doped area on the (411)A face becomes a uniform p-type conduction region due to strong Zn diffusion over the lightly Se-doped regions. Using alternate doping, the authors fabricated a selfaligned stepped substrate (S3) laser. The low resistivity and high-power operation (50 °C 35 mW) of this laser are comparable to those of lasers fabricated using simultaneous impurity doping.


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