New pin MOSFET structure for hot carrier suppression

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New pin MOSFET structure for hot carrier suppression

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As an alternative to lightly doped drain (LDD) structures, a new pin MOSFET structure has been developed with near-intrinsic doping in the channel near the source/drain ends. This new structure has better hot carrier suppression, current drive capability and short channel effects compared to LDD MOSFETs.

Inspec keywords: hot carriers; doping profiles; insulated gate field effect transistors

Other keywords: current drive capability; source/drain ends; hot carrier suppression; pin MOSFET structure; near-intrinsic doping; short channel effects

Subjects: Insulated gate field effect transistors; Semiconductor doping

References

    1. 1)
      • A. Bryant , B. El-Kareh , T. Furukawa , W. Noble , E. Nowak , W. Schwittek , W. Tonti . A fundamental performance limit of optimized 3.3V sub-quarter-micrometerfully overlapped LDD MOSFETs. IEEE Trans. , 5 , 1208 - 1215
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19940275
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