Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Examination of intervalence band absorption and its reduction by strain in 1.55µm compressively strained InGaAs/InP laser diodes.

Examination of intervalence band absorption and its reduction by strain in 1.55µm compressively strained InGaAs/InP laser diodes.

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Reduction of intervalence band absorption found in highly strained semiconductor lasers is dominated by enhancement in the TE gain spectrum due to the inclusion of compressive strain in the active layer and not by a change in the S-like character of the spin-orbit band.

Inspec keywords: gallium arsenide; semiconductor lasers; III-V semiconductors; laser transitions; indium compounds; valence bands

Other keywords: InGaAs/InP laser diodes; TE gain spectrum; intervalence band absorption; active layer; InGaAs-InP; 1.55 micron; compressive strain; highly strained semiconductor lasers; compressively strained

Subjects: Design of specific laser systems; Lasing action in semiconductors; Semiconductor lasers

References

    1. 1)
      • W.S. Ring , A.R. Adams , P.J.A. Thijs , T. Van Dongen . Elimination of intervalence band absorption in compressively strainedInGaAs/InP 1.5 µm MQW lasers observed by hydrostatic pressure measurements. Electron. Lett. , 569 - 570
    2. 2)
      • G. Fuchs , J. Horer , A. Hangleiter , V. Harle , F. Scholz . Intervalence band absorption in unstrained InGaAs multiple quantum wellstructures. Appl. Phys. Lett. , 2 , 231 - 233
    3. 3)
      • W. Zawadzki , G. Landwehr , E.I. Rashba . (1991) Intraband and interband magneto-optical transitions in semiconductors, Landau level spectroscopy.
    4. 4)
      • R. Eppenga , M.F.H. Schuurmans , S. Colak . New k.p. theory for GaAs/Ga1-xAlxAs quantum wells. Phys. Rev. B , 3 , 1554 - 1564
    5. 5)
      • A.R. Adams . Band structure engineering for low-threshold high efficiency semiconductorlasers. Electron. Lett. , 249 - 250
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19940225
Loading

Related content

content/journals/10.1049/el_19940225
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address