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Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal anneal

Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal anneal

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The single crystal growth of Si-Ge alloy was studied in germanium implanted silicon substrate. Ge+ ions were implanted on <100>, p-type silicon substrate at a dose of 1016 cm-2. As-implanted samples were annealed sequentially at a temperature of 700 – 1000°C for different times in an RTA system to crystallise the amorphous layer. The SNMS technique was used to determine the compositional analysis, and RBS in the channelling mode was performed to characterise the samples.

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