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New CMOS compatible junction-isolated lateral base resistance controlled thyristor

New CMOS compatible junction-isolated lateral base resistance controlled thyristor

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A new 550V lateral base resistance controlled thyristor structure is proposed and its operation is rigorously characterised by two-dimensional numerical simulation in the off-state, on-state, and turn-off transient mode. Simulations indicate a 40% lower forward voltage drop over a comparable LIGBT, and a superior switching property over other competing lateral thyristor structures.

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