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Application of δ-doping in GaAs tunnel junctions

Application of δ-doping in GaAs tunnel junctions

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The technique of δ-doping has been employed to fabricate MBE grown GaAs tunnel junctions for application as intercell contacts in tandem solar cells. By applying δ-doping, the effective Si concentration can be increased by almost a factor 10. In this way an effective n-type doping level of ~2 × 1019 cm-3 can be obtained. By growth at low temperature a p-type concentration of 2 × 1019 cm-3 can be achieved using Be. The as-grown δ-doped tunnel junction showed a tunnel current of 55 A cm-2. A tunnel diode with homogeneous Si doping of 4 × 1018 cm-3 shows a much lower tunnel current of 1.3 mA cm-2. To simulate the growth of the top cell, the tunnel junction was annealed at 650 °C for 2 h. After annealing the peak current of the δ-doped tunnel junction dropped to 183 mA cm-2. This is still sufficient for forming intercell contacts in GaAs-AlGaAs tandem cells.

References

    1. 1)
      • Araujo, G.L., Marti, A.: `Limiting efficiencies of ideal multiple bandgap solar cells under concentratedsunlight', Proc. 9th EC Photovoltaic Soal Energy Conf., 1989, p. 111-114.
    2. 2)
      • J.M. Olsen , S.R. Kurtz , A.E. Kibbler , P. Faine . A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell. Appl. Phys. Lett.
    3. 3)
      • C. Amano . Fabrication and numerical analysis of AlGaAs/GaAs tandem solar cellswith tunnel interconnections. IEEE Trans.
    4. 4)
      • Chung, B.-C., Virshup, G.F., Schultz, J.C.: `27.6% (1 sun AM1.5g) monolithic two-junction AlGaAs-GaAs solar cell and25% (1 sun AM0) three-junctionAlGaAs-GaAs-InGaAs cascade solar cell', 21st Photovoltaic Specialists Conf., 1990, p. 179-183.
    5. 5)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    6. 6)
      • Y.G. Chai , R. Chow , C.E.C. Wood . The effect of growth conditions on Si incorporation in molecular beamepitaxial GaAs. Appl. Phys. Lett.
    7. 7)
      • P.M. Koenraad . Observation of high mobility and cyclotron resonance in 20 Å siliconδ-doped GaAs grown by MBE at 480 °C. Semicond. Sci. Technol.
    8. 8)
      • F.W. Ragay , M.R. Leys , J.H. Wolter . Aluminium layers as non-alloyed contacts to p-type GaAs. Appl. Phys. Lett.
    9. 9)
      • F.W. Ragay , M.R. Leys , P.A.M. Nouwens , W.C. van der Vleuten , J.H. Wolter . A MBE-grown high-efficiency GaAs solar cell with directly deposited aluminiumfront contact. IEEE Electron. Device Lett.
    10. 10)
      • P.M. Koenraad , I. Barsony , J.C.M. Henning , J.A.A.J. Peerenboom , J.H. Wolter , H.W.M. Salemink , M.D. Pashley . (1993) Diffusion of Si in δ-doped GaAs studied by magneto transport, Semiconductor interfaces at the subnanometer scale.
    11. 11)
      • S. katsumoto , C. Amano . Effects of substrate temperature on GaAs tunnelling diodes grown by molecularbeam epitaxy. J. Appl. Phys.
    12. 12)
      • R.E. Hayes . A stability criterion for tunnel diode interconnect junctions in cascadesolar cells. Solar Cells
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