Quantum-well intersub-band electroluminescent diode at λ = 5μm

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Quantum-well intersub-band electroluminescent diode at λ = 5μm

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The authors report the first observation of mid-infra-red electroluminescence associated with an intersub-band transition in a unipolar quantum well diode with graded-gap injector. Power levels in the nanowatt range have been measured up to roomtemperature.

Inspec keywords: electroluminescence; light emitting diodes; semiconductor quantum wells; luminescent devices

Other keywords: LEDs; quantum-well intersub-band electroluminescent diode; nanowatt range power levels; graded-gap injector; intersub-band transition; room temperature; 5 mum; unipolar quantum well diode; 296 K; mid-infra-red electroluminescence

Subjects: Light emitting diodes; Semiconductor junctions

References

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      • J. Faist , F. Capasso , Sirtori , D.L. Sivco , A.L. Hutchinson , S.N.G. Chu , A.Y. Cho . Measurement of the intersubband scattering in semiconductor quantum wells by excited state differential absorption spectroscopy. Appl. Phys. Lett. , 1354 - 1356
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      • Faist, J., Capasso, F., Sirtori, C., Sivco, D.L., Cho, A.Y., Pfeiffer, L., West, K.: `Intersubband lifetime in quantum wells with transition energies above and below the optical phonon energy', Proc. MSS6 Conf., (to be published in Solid State Electron.).
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