16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors

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16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors

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© The Institution of Electrical Engineers
Published

A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was developed for application in integrated circuits. The HBT is characterised by an emitter base heterojunction and consequently by a high base doping concentration. By using these transistors an integrated digital circuit, a multiplexer, was implemented. The measured bit rate of this first Si/SiGe HBT circuit was 16Gbit/s.

Inspec keywords: elemental semiconductors; multiplexing equipment; heterojunction bipolar transistors; Ge-Si alloys; silicon; digital integrated circuits; bipolar integrated circuits

Other keywords: emitter base heterojunction; 16 Gbit/s; high base doping concentration; integrated digital circuit; double mesa Si/SiGe heterojunction bipolar transistors; multiplexer IC; Si-SiGe

Subjects: Logic circuits; Bipolar integrated circuits; Switching centres and equipment

References

    1. 1)
      • J.D. Cressler . Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors. IEEE Electron Device Lett. , 166 - 168
    2. 2)
      • F. Sato . (1992) Sub-20psec ECL circuits with 50GHz fmax Selfaligned SiGe HBTs, IEDM Tech. Dig..
    3. 3)
      • H.-U. Schreiber , J.N. Albers , B.G. Bosch . 11.4Gbit/s silicon bipolar multiplexer IC employing 2μm lithography transistors. Electron. Lett. , 1684 - 1685
    4. 4)
      • D. Clawin , U. Langmann , H.-U. Schreiber . 5-Gbit/s Si integrated regenerative demultiplexer and decision circuit. IEEE J. Solid-State Circuits , 385 - 389
    5. 5)
      • H.-U. Schreiber . High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricatedby selfalignment technology. Electron. Lett. , 485 - 487
    6. 6)
      • Schreiber, H.-U., Bosch, B.G.: `Si/SiGe heterojunction bipolar transistors with current gains up to 5000', IEDM Tech. Dig., 1989, p. 643–646.
    7. 7)
      • Bussmann, M.: `A 12.5Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25Gb/s', Tech. Dig. IEEE Solid-State Circuits Conf., 1993, p. 152–153.
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