High performance scaled flash-type EEPROMs fabricated by in situ multiple rapid thermal processing

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High performance scaled flash-type EEPROMs fabricated by in situ multiple rapid thermal processing

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© The Institution of Electrical Engineers
Published

Flash-type EEPROMs were fabricated for the first time by in situ multiple rapid thermal processing (RTP) modules. In the Letter, rapid thermal oxynitridation tunnel oxide (RTONO) formation followed by in situ arsenic (As)-doped floating gate polysilicon growth by rapid thermal chemical vapour deposition (RTCVD) were introduced. The flash cell indicates only 20% narrowing of the Vt window after 5 × 104 program/erase cycle stress. Moreover, there is a higher breakdown field of the ONO film on the floating-gate polysilicon film owing to extremely flat poly-Si surface. Thus, the in situ multiple RTP technology is the key for future flash memory fabrication processes.

Inspec keywords: integrated memory circuits; chemical vapour deposition; rapid thermal processing; integrated circuit technology; EPROM

Other keywords: rapid thermal oxynitridation tunnel oxide formation; As-doped floating gate polysilicon growth; fabrication processes; scaled flash-type EEPROM; ONO film; poly-Si surface; rapid thermal chemical vapour deposition; multiple rapid thermal processing; floating-gate polysilicon film; Si:As; flash memory

Subjects: Semiconductor integrated circuits; Chemical vapour deposition; Semiconductor storage; Memory circuits

References

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      • S. Haddad , C. Chang , A. Wang , J. Bustillo , J. Lien , T. Montalvo , M.V. Buskirk . An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell. IEEE Electron. Device Lett. , 514 - 516
    2. 2)
      • H. Fukuda , A. Uchiyama , T. Kuramochi , T. Hayashio , T. Iwabuchi , T. Ono , T. Takayashiki . High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films. IEEE IEDM Tech Dig.
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      • F. Masuoka , R. Shirota , K. Sakul . Reviews and prospects of non-volatile semiconductor memories. IEICE Trans. Electron. , 868 - 874
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      • T. Kamins . (1988) , Polycrystalline silicon for integrated circuit applications.
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