Reliability characteristics of ohmic contacts for AlGaGs/GaAs HBTs
Reliability characteristics of ohmic contacts for AlGaGs/GaAs HBTs
- Author(s): T. Nozu ; N. Iizuka ; Y. Kuriyama ; S. Hongo
- DOI: 10.1049/el:19931382
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): T. Nozu 1 ; N. Iizuka 1 ; Y. Kuriyama 1 ; S. Hongo 1
-
-
View affiliations
-
Affiliations:
1: Research & Development Center, Toshiba Corporation, Kawasaki, Japan
-
Affiliations:
1: Research & Development Center, Toshiba Corporation, Kawasaki, Japan
- Source:
Volume 29, Issue 23,
11 November 1993,
p.
2069 – 2070
DOI: 10.1049/el:19931382 , Print ISSN 0013-5194, Online ISSN 1350-911X
The thermal stability of ohmic contacts for AlGaAs/GaAs HBTs is presented. Ti/Pt/Au, Ti/Pt/Au and Cr/Pt/Au, and AuGe/Ni/Ti/Pt/Au were investigated for emitter, base, and collector contacts, respectively. As a result of 200°C storage tests, it was found that these contacts did not limit the reliability of AlGaAs/GaAs HBTs.
Inspec keywords: heterojunction bipolar transistors; semiconductor-metal boundaries; gallium compounds; aluminium compounds; ohmic contacts; III-V semiconductors; stability; reliability
Other keywords:
Subjects: Reliability; Maintenance and reliability; Bipolar transistors; Semiconductor-metal interfaces
References
-
-
1)
- A. Katz , B.E. Weir , W.C. Dautremont-Smith . Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing. J. Appl. Phys. , 1123 - 1128
-
2)
- J. Akagi , Y. Kuriyama , K. Morizuka , M. Asaka , K. Tsuda , M. Obara , H. Yamakawa , H. Ibe . AlGaAs/GaAs HBT receiver ICs for a 10Gbps optical communication system. IEEE GaAs IC Symp. Dig. , 45 - 48
-
3)
- O. Nakajima , H. Itoh , T. Nittono , K. Nagata . (1990) Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer, IEEE IEDM Tech. Dig..
-
4)
- C.P. Lee , B.M. Welch , W.P. Fleming . Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs. Electron. Lett. , 407 - 408
-
5)
- D.C. Streit , A.K. Oki , D.K. Umemoto , J.R. Velebir , F.M. Yamada , Y. Saito , M.E. Hafizi , S. Bui , L.T. Tran . High-reliability GaAs-AlGaAs HBT's by MBE with Be base doping and InGaAs emitter contacts. IEEE Electron Device Lett. , 471 - 473
-
6)
- V. Kumar . Reaction of sputtered Pt films on GaAs. J. Phys. Chem. Solids , 535 - 541
-
7)
- Hafizi, M.E., Pawlowicz, L.M., Tran, L.T., Umemoto, D.K., Streit, D.C., Oki, A.K., Kim, M.E., Yen, K.H.: `Reliablity analysis of GaAs/AlGaAs HBTs under forward current/temperature stress', IEEE GaAs IC Symp. Dig., 1990, p. 329–332.
-
8)
- Nozu, T., Tsuda, K., Asaka, M., Obara, M.: `Reliability of mesaetched isolated emitter structure AlGaAs/GaAs HBTs with Be-doped base', IEEE GaAs IC Symp., Dig., 1992, p. 157–160.
-
1)