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Reliability characteristics of ohmic contacts for AlGaGs/GaAs HBTs

Reliability characteristics of ohmic contacts for AlGaGs/GaAs HBTs

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The thermal stability of ohmic contacts for AlGaAs/GaAs HBTs is presented. Ti/Pt/Au, Ti/Pt/Au and Cr/Pt/Au, and AuGe/Ni/Ti/Pt/Au were investigated for emitter, base, and collector contacts, respectively. As a result of 200°C storage tests, it was found that these contacts did not limit the reliability of AlGaAs/GaAs HBTs.

References

    1. 1)
      • A. Katz , B.E. Weir , W.C. Dautremont-Smith . Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing. J. Appl. Phys. , 1123 - 1128
    2. 2)
      • J. Akagi , Y. Kuriyama , K. Morizuka , M. Asaka , K. Tsuda , M. Obara , H. Yamakawa , H. Ibe . AlGaAs/GaAs HBT receiver ICs for a 10Gbps optical communication system. IEEE GaAs IC Symp. Dig. , 45 - 48
    3. 3)
      • O. Nakajima , H. Itoh , T. Nittono , K. Nagata . (1990) Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer, IEEE IEDM Tech. Dig..
    4. 4)
      • C.P. Lee , B.M. Welch , W.P. Fleming . Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs. Electron. Lett. , 407 - 408
    5. 5)
      • D.C. Streit , A.K. Oki , D.K. Umemoto , J.R. Velebir , F.M. Yamada , Y. Saito , M.E. Hafizi , S. Bui , L.T. Tran . High-reliability GaAs-AlGaAs HBT's by MBE with Be base doping and InGaAs emitter contacts. IEEE Electron Device Lett. , 471 - 473
    6. 6)
      • V. Kumar . Reaction of sputtered Pt films on GaAs. J. Phys. Chem. Solids , 535 - 541
    7. 7)
      • Hafizi, M.E., Pawlowicz, L.M., Tran, L.T., Umemoto, D.K., Streit, D.C., Oki, A.K., Kim, M.E., Yen, K.H.: `Reliablity analysis of GaAs/AlGaAs HBTs under forward current/temperature stress', IEEE GaAs IC Symp. Dig., 1990, p. 329–332.
    8. 8)
      • Nozu, T., Tsuda, K., Asaka, M., Obara, M.: `Reliability of mesaetched isolated emitter structure AlGaAs/GaAs HBTs with Be-doped base', IEEE GaAs IC Symp., Dig., 1992, p. 157–160.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19931382
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