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Temperature measurements of telecommunication lasers on a micrometre scale

Temperature measurements of telecommunication lasers on a micrometre scale

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Temperature maps of laser diode facets obtained by photothermal reflectance microscopy are presented. Biased double heterojunction InGaAsP lasers were investigated. The temperature images reveal the influence of laser mode on the spatial distribution of the heat dissipation in the device. Moreover, a study of the modulated reflectance as a function of the injection current is achieved.

References

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      • D. Fournier , B.C. Forget . Thermal wave probing of the optical, electronic and thermal properties of semiconductors. J. de Physique IV, Colloque C6, supplément au Journal de Physique III , C6 - 241
    2. 2)
      • I. Joindot . Optical properties of the buried waveguide in a bistable InGaAsP semiconductor laser. Appl. Phys. Lett. , 16 , 1880 - 1882
    3. 3)
      • A.M. Mansares , J.P. Roger , D. Fournier , A.C. Boccara . , Temperature field determination of InGaAsP/InP lasers by photothermal microscopy: evidence for weak non-radiative processes at the facets.
    4. 4)
      • P.W. Epperlein , G.L. Bona . Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasers. Appl. Phys. Lett. , 24 , 3074 - 3076
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