Comparison of optical waveguide losses in silicon-on-insulator
Comparison of optical waveguide losses in silicon-on-insulator
- Author(s): T. Zinke ; U. Fischer ; A. Splett ; B. Schüppert ; K. Petermann
- DOI: 10.1049/el:19931356
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): T. Zinke 1 ; U. Fischer 1 ; A. Splett 1 ; B. Schüppert 1 ; K. Petermann 1
-
-
View affiliations
-
Affiliations:
1: Institut für Hochfrequenztechnik, Technische Universität Berlin, Berlin, Germany
-
Affiliations:
1: Institut für Hochfrequenztechnik, Technische Universität Berlin, Berlin, Germany
- Source:
Volume 29, Issue 23,
11 November 1993,
p.
2031 – 2033
DOI: 10.1049/el:19931356 , Print ISSN 0013-5194, Online ISSN 1350-911X
Waveguide losses in SOI (silicon-on-insulator) material fabricated by different techniques are compared thus enabling us to confirm the theoretical dependence of losses on layer thickness. Singlemode waveguide losses in BE-SOI (bond and etchback-SOI) below 0.5dB/cm are reported for waveguides with cross-sections of several square micrometres.
Inspec keywords: optical waveguides; silicon; silicon compounds; elemental semiconductors; semiconductor-insulator boundaries; integrated optics; optical losses
Other keywords:
Subjects: Integrated optics; Metal-insulator-semiconductor structures; Optical waveguides; Integrated optics; Optical waveguides and couplers
References
-
-
1)
- J. Schmidtchen , B. Schüppert , A. Splett , K. Petermann . Germanium-diffused waveguides in silicon for λ = 1.3μm and λ = 1.55μm with losses below 0.5dB/cm. IEEE Photonics Technol. Lett. , 875 - 877
-
2)
- B.N. Kurdi , D.G. Hall . Optical waveguides in oxygen-implanted buried-oxyde silicon-on-insulator structures. Opt. Lett. , 175 - 177
-
3)
- W.P. Maszara , G. Goetz , A. Caviglia , J.B. McKitterick . Bonding of silicon wafers for silicon-on-insulator. J. Appl. Phys. , 4943 - 4950
-
4)
- R.A. Soref , J. Schmidtchen , K. Petermann . Large singlemode rib waveguides in GeSi-Si and Si-on-SiO2. J. Quantum Electron. , 1971 - 1974
-
5)
- F. Navamar , R.A. Soref . Optical waveguiding in GexSi1-xSi strained layer heterostructures. J. Appl. Phys. , 3370 - 3372
-
6)
- J. Schmidtchen , A. Splett , B. Schuppert , K. Petermann , G. Burbach . Low loss singlemode optical waveguides with large cross section in silicon-on-insulator. Electron. Lett. , 1486 - 1488
-
7)
- Y.M. Liu , P.R. Prucnal . Low-loss silicon carbide optical waveguides for silicon-based optoelectronic devices. IEEE Photonics Technol. Lett. , 704 - 707
-
8)
- M.A. Guerra . The status of SIMOX technology. Solid State Technol. , 75 - 78
-
9)
- A. Splett , J. Schmidtchen , B. Schüppert , K. Petermann , E. Kasper , H. Kibbel . Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon. Electron. Lett. , 1035 - 1036
-
10)
- J.C.C. Fan , M.W. Geis , B-Y. Tsaur . Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators. Appl. Phys. Lett. , 365 - 367
-
1)