High reflectivity and low resistance 1.55μm Al0.65In0.35As/Ga0.63In0.37As strained quarter wave Bragg reflector stack
High reflectivity and low resistance 1.55μm Al0.65In0.35As/Ga0.63In0.37As strained quarter wave Bragg reflector stack
- Author(s): P. Guy ; K. Woodbridge ; M. Hopkinson
- DOI: 10.1049/el:19931296
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): P. Guy 1 ; K. Woodbridge 1 ; M. Hopkinson 2
-
-
View affiliations
-
Affiliations:
1: Department of Electronic & Electrical Engineering, University College London, London, UK
2: Dept. Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
-
Affiliations:
1: Department of Electronic & Electrical Engineering, University College London, London, UK
- Source:
Volume 29, Issue 22,
28 October 1993,
p.
1947 – 1948
DOI: 10.1049/el:19931296 , Print ISSN 0013-5194, Online ISSN 1350-911X
Reflector stacks grown for use in devices operating at 1.55μm on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternary layers, which are ∼ 1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.
Inspec keywords: indium compounds; optical modulation; refractive index; integrated optics; gallium arsenide; contact resistance; reflectivity; III-V semiconductors; aluminium compounds; mirrors
Other keywords:
Subjects: Integrated optics; Optical beam modulators; Performance and testing of optical systems; Integrated optics
References
-
-
1)
- G.D. Boyd , D.A.B. Miller , D.S. Chemla , S.L. McCall , A.C. Gossard , J.H. English . Multiple quantum well reflection modulator. Appl. Phys. Lett. , 17
-
2)
- Y. Imajo , A. Kasukawa , S. Kashiwa , H. Okamoto . GaInAsP/InP semiconductor multilayer reflector grown by metalorganic chemical vapour deposition and its application to surface emitting laser diode. Jpn. J. Appl. Phys. , 7
-
3)
- Y. Yamazoe , T. Nishino , Y. Hamakawa . Electroreflectance study of InGaAsP alloys lattice matched to InP. IEEE J. Quantum Electron. , 2
-
4)
- P. Barnes , P. Zouganeli , A. Rivers , M. Whitehead , G. Parry , K. Woodbridge , C. Roberts . GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si Substrate. Electron. Lett. , 15
-
5)
- S. Adachi . Material parameters of In1−xGaxAsyP1−y and related binaries. J. Appl. Phys. , 12
-
6)
- E.H. Perea , E. Mendez , C. Fonstad . Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide. Appl. Phys. Lett. , 12
-
7)
- J. Thomson , A.K. Woods , A.J. Mosely , M.Q. Kearly , P.J. Topham , N. Muang , N. Carr . The use of InP-based semiconductor reflective stacks for enhanced device performance. J. Cryst. Growth.
-
8)
- M.P.C.M. Krun . Heterojunction band offsets and effective masses in III-V quaternary alloys. Semicond. Sci. Technol.
-
9)
- K. Law , J.L. Mertz , L.A. Coldren . Superlattice surface-normal asymmetric Fabry-Perot modulators, optical modulation and switching. IEEE J. Quantum Electron. , 2
-
10)
- Webb, R.P., Rejman-oreene, M.A.Z.: `A 4 × 4 MQW modulator array in a parallel interconnect demonstration', 103, IEEE Colloquium, Applications of quantum wells in optoelectronics, 1990, 1990.
-
11)
- A.J. Moseley , J. Thompson , D.J. Robbins , M.Q. Kearly . High reflectivity AlGaInAs/InP multilayer mirrors grown by low pressure MOVPE for application to long wavelength high contrast-ratio multi-quantum well modulators. Electron. Lett. , 25
-
12)
- R.E. Nahory , M.A. Pollack , W.D. Johnston , R.L. Barnes . Band gap versus composition and demonstration of Vegard's law for In1−xGaxAsyP1−y lattice matched to InP. Appl. Phys. Lett. , 7
-
13)
- M. Whitehead , A. Rivers , G. Parry , J.S. Roberts , C. Button . Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1. Electron. Lett. , 15
-
14)
- K. Tai , S.L. McCall , S.N. Chu , W.T. Tsang . Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55μm wavelength. Appl. Phys. Lett. , 11
-
1)
Related content
