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Reduction of p-doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping

Reduction of p-doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping

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Tho Letter reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differentia] resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.

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