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The effect of three base dopants C, Be and Zn on the bias stress stability of npn AlGaAs/GaAs HBTs has been investigated for the first time. In this study 3 × 30μm2 HBTs were fabricated under identical process technology, emitter-base geometry and layout design. Following 24 h of identical bias stress, it is found that both Be- and Zn-doped devices exhibited current gain degradation as high as 68 and 57%, respectively, compared with only 7% for the C-doped device. The superior bias stress stability of C-doped HBTs is demonstrated.
References
-
-
1)
-
F. Ren ,
T.R. Fullowan ,
J. Lothian ,
P.W. Wisk ,
C.R. Abernathy ,
R.F. Kopf
.
Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors.
Appl. Phys. Lett.
,
27 ,
3613 -
3615
-
2)
-
R.L. Longini
.
Rapid zinc diffusion in gallium arsenide.
Solid-State Electron
,
127 -
130
-
3)
-
W.J. Ho ,
N.L. Wang ,
M.F. Chang ,
A. Sailer ,
J.A. Higgins
.
Self-aligned, emitter-edge-passivated AlGaAs heterojunction bipolar transistors with extrapolated maximum oscillation frequency of 350 GHz.
IEEE Trans
,
2
-
4)
-
Hafizi, M.E., Pawlowicz, L.M., Tran, L.T., Umemoto, D.K., Streit, D.C., Oki, A.K., Kim, M.E., Yen, K.H.: `Reliability analysis of GaAs/AlGaAs HBTs under forward current temperature stress', Techn. Dig. Int. Electron Device Meeting, December 1990, p. 329–332.
-
5)
-
D.G. Deppe
.
Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs/GaAs npn bipolar transistors.
Appl. Phys. Lett.
,
370 -
372
-
6)
-
M.E. Hafizi ,
C.R. Crowell ,
L.M. Pawlowicz ,
M.E. Kim
.
Improved current gain and fT through doping profile selection in linearly graded heterojunction bipolar transistors.
IEEE Trans.
,
8 ,
1779 -
1788
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