New latch-up-free IGBT with low on-resistance

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New latch-up-free IGBT with low on-resistance

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© The Institution of Electrical Engineers
Published

A new form of IGBT is presented which does not latch up in the on-state however hard it is driven. It also has a very low on-resistance due to the small cell width achievable and the full conductivity modulation of the channel region.

Inspec keywords: insulated gate bipolar transistors; power transistors

Other keywords: IGBT; cell width; conductivity modulation; insulated gate bipolar transistor; low on-resistance; channel region; latch-up-free

Subjects: Bipolar transistors; Insulated gate field effect transistors

References

    1. 1)
      • Baliga, B.J.: `The insulated gate rectifier (IGR): A new power switching device', IEDM Tech. Dig., 1982, p. 264–267.
    2. 2)
      • H.R. Chang , B.J. Baliga . 500V n-channel insulated-gate bipolar transistor with a trench-gate structure. IEEE Trans. , 9 , 1824 - 1829
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      • A. McCowen , K. Board . Gate-controlled bulk-barrier mechanism in a MOS power transistor. IEE Proc. I , 6 , 168 - 170
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      • M. Darwish , K. Board . Lateral resurfed COMFET. Electron. Lett. , 519 - 520
    5. 5)
      • B.J. Baliga . Suppressing latch-up insulated gate transistors. IEEE Electron Device Lett. , 323 - 325
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