High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres

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High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres

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A 50μm-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50°C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such as the divergence and the wavelength are less than ±4.6% and less than ±2.2%, respectively.

Inspec keywords: laser transitions; aluminium compounds; semiconductor laser arrays; gallium arsenide; III-V semiconductors

Other keywords: high-temperature operation; multibeam optical disc drive; CW conditions; 100 mW; 50 micron; uniform power/current characteristics; 780 nm; MQW laser diode array; MQW; active layer; AlGaAs multiquantum well; 50 degC

Subjects: Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors

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