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780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

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© The Institution of Electrical Engineers
Published

Tensile-strained active layer GaAs/AlGaAs separateconfinement- heterostructure quantum-well lasers are reported. These lasers oscillate in the 780 nm band in the TM mode by TM mode gain enhancement in the tensile-strained active layer. The threshold current density of single-quantum-well laser diodes increases rapidly with heatsink temperature. However, triple-quantum-well laser diodes with a cavity length of 485–110 μm oscillated with a threshold current density 1–4 and 30 kA/cm2.

Inspec keywords: laser modes; laser transitions; gallium compounds; aluminium compounds; gallium arsenide; current density; semiconductor lasers; III-V semiconductors

Other keywords: triple-quantum-well laser diodes; tensile-strained quantum-well lasers; heatsink temperature; single-quantum-well laser diodes; 110 to 485 micron; GaAsP-AlGaAs; threshold current density; GaAsP/AlGaAs; gain enhancement; TM mode; 780 nm; separate-confinement-heterostructure

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

    1. 1)
      • Okamoto, M., Mawatari, H., Nakashima, K., Kano, F., Kondo, Y., Sato, K.: `A novel structure for TM mode gain enhancement in long wavelength strained layer superlattice laser diodes with tensile stress on the barrier layers', 22nd Conf. on Solid State Devices and Materials, 1990, Sendai, p. 549–552.
    2. 2)
      • C.A. Wang , J.N. Walpole , L.J. Missaggia , J.P. Donnelly , H.K. Choi . AlInGaAs/AlGaAs separate-confinement heterostructure strained singlequantum well diode lasers grown by organometallic vapor phase epitaxy. Appl. Phys. Lett. , 2208 - 2210
    3. 3)
      • K. Magari , M. Okamoto , H. Yasaka , K. Sato , Y. Noguchi , O. Mikami . Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure. IEEE Photonics Technol. Lett. , 556 - 558
    4. 4)
      • M.J.B. Boermans , S.H. Hagen , A. Valster , M.N. Finke , J.M.M. van der Heyden . Investigation of TE and TM polarised laser emission in GalnP/AlGalnP lasers by growth-controlled strain. Electron. Lett. , 1438 - 1439
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