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Fully ion-implanted InP/InGaAs heterojunction FET fabrication in photodiode layer structure for monolithic integration

Fully ion-implanted InP/InGaAs heterojunction FET fabrication in photodiode layer structure for monolithic integration

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© The Institution of Electrical Engineers
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A fully ion-implanted InP/lnGaAs HJFET has been fabricated in a layer structure optimised for a pin photodiode. Ion implantation has been used to form the channel, to improve the source and drain contact resistances, and to define the 1.5 μm long gate. The HJFETs show a minimum output conductance of 14 mS/mm and a maximum transconductance of 140 mS/mm.

Inspec keywords: junction gate field effect transistors; field effect integrated circuits; integrated optoelectronics; ion implantation; III-V semiconductors; indium compounds; p-i-n photodiodes; gallium arsenide

Other keywords: 140 mS/mm; monolithic integration; photodiode layer structure; source contact resistance; transconductance; OEIC; output conductance; ion-implanted InP/InGaAs HJFET; pin photodiode; drain contact resistances; InP-InGaAs; 1.5 micron

Subjects: Semiconductor doping; Other field effect integrated circuits; Other field effect devices; Integrated optoelectronics; Photoelectric devices

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