High power, low-jitter encoded picosecond pulse generation using an RF-locked self-Q-switched multicontact GaAs/GaAlAs diode laser

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High power, low-jitter encoded picosecond pulse generation using an RF-locked self-Q-switched multicontact GaAs/GaAlAs diode laser

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© The Institution of Electrical Engineers
Published

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

Inspec keywords: laser mode locking; III-V semiconductors; optical modulation; encoding; aluminium compounds; gallium arsenide; semiconductor lasers; Q-switching; optical losses; high-speed optical techniques

Other keywords: GaAs-GaAlAs; self-Q-switching diode laser; RF locking; 300 fs; high power; 1 W; loss direct modulation; jitter; encoded picosecond pulse generation; multicontact GaAs/GaAlAs diode laser; 2.48 GHz; low-jitter; 2 Gbit/s

Subjects: Lasing action in semiconductors; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Ultrafast optical techniques

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