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Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback

Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback

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A two-stage 12GHz LNA has been realised as a lumped element MMIC on GaAs substrates using Ino0.25Ga0.75As channel PM-MODFETs. The gain is >17dB and noise figure is <1.25dB. Input (output) match is better than −21 dB (−14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930934
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