Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Quantum well AlGaAs/GaAs monolithic colliding pulse modrlocked laser

Quantum well AlGaAs/GaAs monolithic colliding pulse modrlocked laser

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

The design, fabrication and characterisation of a short wavelength ( ∼ 860 nm) quantum well AlGaAs/GaAs monolithic colliding pulse modelocked (CPM) laser are described. Devices with modelocked operation repetition rates in the range 73–129 GHz and pulse widths less than 2 ps are described. The importance of the polarisation dependence of the saturable absorber and the gain section in the operation of a quantum well monolithic CPM is discussed.

Inspec keywords: semiconductor lasers; laser mode locking; III-V semiconductors; integrated optics; gallium arsenide; aluminium compounds

Other keywords: pulse widths; fabrication; quantum well monolithic colliding pulse modelocked laser; gain section; AlGaAs-GaAs; 73 to 129 GHz; 860 nm; short wavelength; modelocked operation repetition rates; polarisation dependence; saturable absorber; design

Subjects: Integrated optics; Integrated optics; Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning

References

    1. 1)
      • D.J. Derickson , R.J. Helkey , A. Mar , J.R. Karin , Waserbauer , G. John , J.E. Bowers . Short pulse generation using multi-segment mode-locked semiconductor lasers. IEEE J. Quantum Electron. , 2186 - 2202
    2. 2)
      • S. Schmitt-Rink , D.S. Chemla , D.A.B. Miller . Linear and nonlinear optical properties of semiconductor quantum wells. Adv. Phys. , 89 - 188
    3. 3)
      • P.P. Vasil'Ev , V.N. Morozov , Y.M. Popov , A.B. Sergeev . Subpicosecond pulse generation by tandem-type AlGaAs DH laser with colliding pulse mode locking. IEEE J. Quantum Electron. , 149 - 151
    4. 4)
      • Y.K. Chen , M.C. Wu , T. Tanbun-Ek , R.A. Logan , M.A. Chin . Subpicosecond monolithic colliding-pulse mode-locked multiple quantumwell lasers. Appl. Phys. Lett. , 1253 - 1255
    5. 5)
      • C. Harder , J.S. Smith , K.Y. Lau , A. Yariv . Passive mode locking of buried heterostructure lasers with nonuniform current injection. Appl. Phys. Lett. , 772 - 774
    6. 6)
      • Y.-K. Chen , C.W. Ming . Monolithic colliding-pulse mode-locked quantum-well lasers. IEEE J. Quantum Electron. , 2177 - 2185
    7. 7)
      • N.I. Cameron , G. Hopkins , I.G. Thayne , S.P. Beaumont , C.D.W. Wilkinson , M. Holland , A.H. Kean , C.R. Stanley . Selective reactive ion etching of GaAs/AlGaAs metal-semiconductor field effect transistors. J. Vac. Sci. Tech. B , 3538 - 3541
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930757
Loading

Related content

content/journals/10.1049/el_19930757
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address