Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides

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Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides

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© The Institution of Electrical Engineers
Published

Magnetic field enhanced reactive ion etching using SiCl4, combined with a smooth reflowed photoresist masking technique, has been used to fabricate AlGaAs ridge waveguides with extremely smooth sidewalls. The effect of pressure, flowrate and power on etch rate and sidewall smoothness has been studied. Waveguides exhibited optical losses comparable to those obtained using wet etching.

Inspec keywords: aluminium compounds; gallium arsenide; optical losses; sputter etching; masks; optical workshop techniques; III-V semiconductors; optical waveguides; surface topography

Other keywords: smooth reflowed photoresist masking technique; magnetic field enhanced RIE; optical losses; etch rate; MERIE; GaAs-AlGaAs; AlGaAs ridge waveguides; photoresist reflow; extremely smooth sidewalls; sidewall smoothness; SiCl4

Subjects: Optical waveguides; Surface treatment and degradation in semiconductor technology; Surface treatment (semiconductor technology); Optical fabrication, surface grinding; Optical waveguides and couplers

References

    1. 1)
      • J. Singh . Magnetron ion etching of InP using a mixture of methane and hydrogen and its comparison with reactive ion etching. J. Vac. Sci. Technol. , 4 , 1911 - 1919
    2. 2)
      • R.J. Contolini , L.A. D'Asaro . High rate masked etching of GaAs by magnetron ion etching. J. Vac. Sci. Technol. , 3 , 706 - 713
    3. 3)
      • G.J. Sonek , L.J. Zhong , E.D. Wolf , J.M. Ballantyne . SiCl4 reactive ion etching for GaAs optical waveguides. J. Lightwave Technol. , 5 , 1147 - 1150
    4. 4)
      • M. Meyyappan , G.F. McLane , H.S. Lee , D. Eckart , M. Namaroff , J. Sasserath . Magnetron reactive ion etching of GaAs in SiCl4. J. Vac. Sci. Technol. , 3 , 1215 - 1217
    5. 5)
      • S.M. Rossnagel , J.L. Vossen , W. Kern . (1991) , Thin film processes II.
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