Explicit C∞-continuous and general model for nMOSFETs

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Explicit C∞-continuous and general model for nMOSFETs

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An explicit and single-piece model for nMOSFETs is presented. The drain current and total charges are C∞-continuous under all regions of normal operation. Good agreement has been found with HSPICE simulations. The model also improves the smoothness at the transitions between different regions, and hence the convergence.

Inspec keywords: semiconductor device models; insulated gate field effect transistors

Other keywords: drain current; convergence; C∞-continuous; HSPICE simulations; single-piece model; n-channel devices; NMOS transistor; nMOSFETs

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing

References

    1. 1)
      • C.K. Park , C.Y. Lee , K. Lee , B.J. Moon , Y.H. Byun , M. Shur . A unified current–voltage model for long-channel nMOSFET. IEEE Trans. , 2 , 399 - 406
    2. 2)
      • `CADENCE DESIGN SYSTEMS INC.: ‘SPICE reference manual’', March 1992, p. 8-49–8-80.
    3. 3)
      • Y.P. Tsividis . (1987) , Operation and modeling of the MOS transistor.
    4. 4)
      • C. McAndrew , B.K. Bhattacharyya , O. Wing . A single-piece C∞-continuous MOSFET model including subthreshold conduction. IEEE Electron Device Lett. , 10 , 565 - 567
    5. 5)
      • L. Dunlop . An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion. IEEE J. Solid-State Circuits , 2 , 616 - 619
    6. 6)
      • M. Shur , T.A. Fjedly , T. Ytterdal , K. Lee . Unified MOSFET model. Solid-State Electron , 12 , 1795 - 1802
    7. 7)
      • B.J. Sheu , D.L. Scharfetter , P.-K. Ko , M.-C. Jeng . BSIM: Berkeley short-channel IGFET model for MOS transistors. IEEE J. Solid-State Circuits , 4 , 567 - 574
    8. 8)
      • Y.H. Byun , K. Lee , M. Shur . Unified charge control model and subthreshold current in heterostructure field-effect transistors. IEEE Electron Device Lett. , 1 , 50 - 53
    9. 9)
      • `META-SOFTWARE, INC.: ‘HSPICE user's manual’', 1990, p. 7-100–7-126.
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