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Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contacts

Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contacts

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Metal–semiconductor field effect transistors (MESFETs) were compared using either TiPtAu or Al as both gate metal and interconnect metal to GeMoW source/drain contacts. The GeMoW/Al MESFET demonstrated superior I–V characteristics following thermal cycling at 500°C. These results demonstrate a complete device and interconnect metallisation scheme capable of withstanding thermal stressing at 500°C.

References

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      • Merkel, K.G., Trombley, G.D., Dettmer, R.W., Huang, C.I., Robinson, G.D., Larau, R.T., Schauer, S.N.: `Refractory GeMoW ohmic contacts to p', Proc. 15th State-of-the-Art Program on Compound Semiconductors, 1991, Phoenix, AZ, p. 17–27.
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      • M. Murakami , W.H. Price , Y.C. Shih , N. Braslau , K.D. Childs , C.C. Parks . Thermally stable ohmic contact to n-type GaAs. II. MoGeInW contact metal. J. Appl. Phys. , 3295 - 3303
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