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Optimised proton implantation step for vertical-cavity surface-emitting lasers

Optimised proton implantation step for vertical-cavity surface-emitting lasers

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© The Institution of Electrical Engineers
Published

The influence of proton implantation in the distributed Bragg reflectors of vertical-cavity surface-emitting laser structures has been studied via measurement of the photoluminescence for different implantation and annealing conditions. It is shown that by optimal annealing the isolating layer can be positioned close to the active region with no detectable deterioration of photoluminescence.

Inspec keywords: semiconductor lasers; distributed Bragg reflector lasers; annealing; laser cavity resonators; photoluminescence; ion implantation

Other keywords: proton implantation step; DBR laser; annealing conditions; photoluminescence; distributed Bragg reflectors; vertical-cavity; surface-emitting lasers; optimal annealing

Subjects: Photoluminescence in tetrahedrally bonded nonmetals; Laser resonators and cavities; Semiconductor doping; Optical properties of nonmetallic thin films; Laser resonators and cavities; Lasing action in semiconductors; Semiconductor lasers

References

    1. 1)
      • S.J. Pearton . Ion implantation in GaAs. Solid State Phenomena , 247 - 280
    2. 2)
      • G. Hasnain , K. Tai , L. Yang , Y.H. Wang , R.J. Fisher , J.D. Wynn , B. Weir , N.K. Dutta , A.Y. Cho . Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors. IEEE J. Quantum Electron. , 1377 - 1385
    3. 3)
      • E. Wendler , W. Wesch , G. Götz . Defects in weakly damaged ion-implanted GaAs and other III-V semiconductors. Phys. Stat. Sol. (a) , 289 - 299
    4. 4)
      • J.F. Ziegler , J.P. Biersack . (1985) , The stopping and range of ions in solids.
    5. 5)
      • J.L. Jewell , J.P. Harbison , A. Scherer , Y.H. Lee , L.T. Florez . Vertical-cavity surface-emitting lasers: design, growth, fabrication,characterization. IEEE J. Quantum Electron. , 1332 - 1346
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