The first near room temperature continuous wave lasing operation of a GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.
Inspec keywords: semiconductor lasers; laser transitions; gallium arsenide; indium compounds; III-V semiconductors; gallium compounds
Other keywords:
Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems
References
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