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Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser

Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser

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© The Institution of Electrical Engineers
Published

The first near room temperature continuous wave lasing operation of a GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.

Inspec keywords: semiconductor lasers; laser transitions; gallium arsenide; indium compounds; III-V semiconductors; gallium compounds

Other keywords: GaInAsP-InP; room temperature; circular narrow output beam; CW lasing operation; 1.3 micron; continuous wave; buried heterostructure; MgO-Si heatsink mirror; threshold current; surface emitting laser

Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems

References

    1. 1)
      • T. Baba , K. Suzuki , V. Yogo , K. Iga , F. Koyama . Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth. Electron. Lett. , 331 - 332
    2. 2)
      • Baba, T., Yogo, Y., Suzuki, K., Yogo, Y., Koyama, F., Iga, K.: `First room temperature cw operation of GaIAsP/InP surface emitting laser', PD2, Dig. Quantum Optoelectronics Topical Meeting, 1993.
    3. 3)
      • H. Wada , D.I. Babic , D.I. Crawford , J.J. Dudley , J.E. Bowers , E.L. Hu , J.L. Merz . Low threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers. IEEE Photonics Technol. Lett. , 977 - 979
    4. 4)
      • Kasukawa, A., Imajo, Y., Kashiwa, S., Fukushima, T., Okamoto, H.: `Room temperature pulsed oscillation of GaInAsP/InP surface emitting laser diode with Bragg reflector grown by MOCVD', VB-II, Dig. Device Res. Conf., 1990.
    5. 5)
      • T. Tadokoro , H. Okamoro , Y. Kohama , T. Kawakami , T. Kurokawa . Room temperature pulsed operation of 1.5 μm GaInAsP/InP vertical-cavity surface-emitting laser. IEEE Photonics Technol. Lett. , 409 - 411
    6. 6)
      • Kubota, S., Koyama, F., Iga, K.: `Low threshold current density operation of a 1.3 μm GaInAsP/InP transmission-type surface-emitting laser', JThD5, Dig. Conf. Lasers and Electro-Optics, 1992.
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