Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors

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Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors

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© The Institution of Electrical Engineers
Published

The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.

Inspec keywords: electric breakdown of solids; gallium arsenide; solid-state microwave devices; III-V semiconductors; indium compounds; heterojunction bipolar transistors

Other keywords: DHBT; SHF; collector-emitter breakdown voltage; 14 V; microwave power performance; InP-InGaAs-InP; 5 GHz; 8 dB; power gain; double-heterojunction bipolar transistors

Subjects: Bipolar transistors; Solid-state microwave circuits and devices

References

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      • A. Feygenson , D. Ritter , R.A. Hamm , P.R. Smith , R.K. Montgomery , R.D. Yadvish , H. Temkin , M.B. Panish . InGaAs/InP composite collector heterostructure bipolar transistors. Electron. Lett. , 607 - 609
    2. 2)
      • E. Tokumitsu , A.G. Dentai , C.H. Joyner , S. Chandrasekhar . InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfer delta doping in the collector region. Appl. Phys. Lett. , 26 , 2841 - 2843
    3. 3)
      • Stanchina, W.E., Metzger, R.A., Liu, T., Lou, P.F., Hensen, J.F., Pierce, M.W., McCray, L.G.: `60 GHz InAlAs/InGaAs/InP DHBT's grown by MOVPE + MBE', Paper VIA-6, Device Research Conf., 1991, Boulder, CO, USA.
    4. 4)
      • J.C. Vlcek , C.G. Fonstad . Multiply-graded InGaAlAs heterojunction bipolar transistors. Electron. Lett. , 1213 - 1214
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