Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAIAs multiquantum well modulator

Access Full Text

Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAIAs multiquantum well modulator

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A 20 GHz optical pulse train was generated by a sinusoidally-driven InGaAs/InAlAs multiquantum well intensity modulator operating at low voltages (from –2 to –3 V DC bias with a 3.2 V peak-to-peak RF signal). An approximately transform-limited optical pulse train width of 8ps and a spectral width of 40 GHz were obtained.

Inspec keywords: semiconductor quantum wells; aluminium compounds; gallium arsenide; optical modulation; indium compounds; III-V semiconductors; electro-optical devices; pulse generators

Other keywords: pulse generation; intensity modulator; 20 GHz; high repetition rate; -3 to -2 V; low voltages; semiconductors; multiquantum well modulator; sinusoidally-driven; MQW; optical pulse train; InGaAs-InAlAs

Subjects: Electro-optical devices; Optical beam modulators

References

    1. 1)
      • Suzuki, M., Taga, H., Tanaka, H., Edagawa, N., Yamamota, S., Matsushima, Y., Wakabayashi, H.: `Transform-limited optical pulse generation by InGaAsP electroabsorption modulators and long-distance soliton transmission', Soliton Conf., November 1992, Kyoto, p. 28.
    2. 2)
      • M. Nakazawa , E. Yamada , H. Kubota , K. Suzuki . 10 Gbit/s soliton data transmission over million kilometres. Electron. Lett. , 1270 - 1272
    3. 3)
      • Kawano, K., Naganuma, K., Mitomi, O., Wakita, K., Kotaka, I., Nagamuma, M.: `Large signal modulation characteristics of InGaAs/InAlAs MQW optical modulator', Autumn Meeting of the Japan Society of Applied Physics, 1990, The Japan Society of Applied Physics, , p. 933, 1990.
    4. 4)
      • K. Kawano , O. Mitomi , K. Wakita , I. Kotaka , M. Naganuma . Design of InGaAs/InAlAs multiple-quantum-well (MQW) optical modulators. IEEE J. Quantum Electron. , 224 - 226
    5. 5)
      • O. Mitomi , K. Kawano , K. Wakita , I. Kotaka , S. Nojima , M. Naganuma . Chirping characteristic and frequency response of MQW optical intensity modulator. J. Lightwave Technol. , 71 - 75
    6. 6)
      • M. Suzuki , H. Tanaka , K. Utaka , N. Edagawa , Y. Matsushima . Transform-limited 14 ps optical pulse generation with 15 GHz repetitionrate by InGaAsP electroabsorption modulator. Electron. Lett. , 1007 - 1008
    7. 7)
      • I. Kotaka , K. Wakita , K. Kawano , M. Asai , M. Naganuma . High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulators. Electron. Lett. , 2162 - 2163
    8. 8)
      • K. Wakita , I. Kotaka , O. Mitomi , H. Asai , Y. Kawamura . Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz. Photonics Technol. Lett. , 138 - 140
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930480
Loading

Related content

content/journals/10.1049/el_19930480
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading