Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Hydrogenated amorphous silicon-carbide thin-film light-emitting diode with quantum-well-injection structure

Hydrogenated amorphous silicon-carbide thin-film light-emitting diode with quantum-well-injection structure

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC : H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC : H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256cd/m2 at an injection current density of 800mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC : H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC : H QWI TFLED.

Inspec keywords: semiconductor materials; thin film devices; p-i-n diodes; silicon compounds; light emitting diodes; hydrogen

Other keywords: SiC:H; quantum-well-injection structure; thin-film; hydrogenated amorphous semiconductor; PIN device; electroluminescence intensity; light-emitting diode; 6 V

Subjects: Light emitting diodes

References

    1. 1)
      • D. Kruangam , D. Deguchi , T. Toyama , H. Okamoto , Y. Hamakawa . Carrier injection mechanism in an a-SiC : H p–i–n junction thin-film LED. IEEE Trans. , 957 - 965
    2. 2)
      • S.M. Paasche , T. Toyama , K. Okamoto , Y. Hamakawa . Amorphous-SiC thin film p–i–n light-emitting diode using amorphous-SiN hot carrier tunnelling injection layers. IEEE Trans. , 2895 - 2902
    3. 3)
      • D. Kruangam , T. Endo , M. Deguchi , G.P. Wei , H. Okamoto , Y. Hamakawa . (1986) Amorphous silicon-carbide thin film light emitting diode, Optoelectronic-Devices and Technologies.
    4. 4)
      • J.I. Pankove , D.E. Carson . Electroluminescence in amorphous silicon. Appl. Phys. Lett. , 620 - 622
    5. 5)
      • J.W. Hong , N.F. Shin , T.S. Jen , S.L. Ning , C.Y. Chang . Graded-gap a-SiC : H p–i–n thin-film light-emitting diodes. IEEE Electron Device Lett. , 375 - 377
    6. 6)
      • H. Ihara , H. Nozaki . Improvement of hydrogenated amorphous silicon n–i–p diode performance by H2 plasma treatment for i/p interface. Jpn. J. Appl. Phys. , L2159 - L2162
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930473
Loading

Related content

content/journals/10.1049/el_19930473
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address