Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators

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Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators

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© The Institution of Electrical Engineers
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Using picosecond pump-probe measurements, InGaAs/ InGaAlAs and InGaAs/InGaAsP quantum well modulator structures are compared directly. It is found that the shortpulse exciton saturation intensity for the Al-based structure is at least 10 times that for the P-based system. The more efficient carrier sweep-out observed in the Al-based modulator is due to the lower valence-band discontinuity, making it by far the more attractive structure for high-power applications.

Inspec keywords: gallium arsenide; indium compounds; semiconductor quantum wells; valence bands; optical modulation; aluminium compounds; III-V semiconductors; electroabsorption; gallium compounds

Other keywords: short-pulse exciton saturation intensity; valence-band discontinuity; quantum well modulators; carrier sweep-out; picosecond pump-probe measurements; InGaAs-InGaAlAs; InGaAs-InGaAsP

Subjects: Electro-optical devices; Semiconductor junctions; Optical properties of nonmetallic thin films; Optical beam modulators

References

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      • D.S. Chemla , D.A.B. Miller , P.W. Smith , A.C. Gossard , W. Wiegmann . Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAsmultiple quantum well structures. IEEE J. Quantum Electron. , 265 - 275
    2. 2)
      • T.H. Wood , T.Y. Chang , J.Z. Pastalan , C.A. Burrus , N.J. Sauer , B.C. Johnson . Increased optical saturation intensities in GaInAs multiple quantum wellsby the use of AlGaInAs barriers. Electron. Lett. , 257 - 259
    3. 3)
      • M. Allovon , M. Quillec . Interest in AlGaInAs on InP for optoelectronic applications. IEE Proc. J , 148 - 152
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