Fabrication and performances of delta-doped Si n-MESFET grown by MBE
Fabrication and performances of delta-doped Si n-MESFET grown by MBE
- Author(s): Q. Chen ; M. Willander ; J. Carter ; C.H. Thaki ; E.R.A. Evans
- DOI: 10.1049/el:19930450
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- Author(s): Q. Chen 1 ; M. Willander 1 ; J. Carter 2 ; C.H. Thaki 2 ; E.R.A. Evans 2
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View affiliations
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Affiliations:
1: Department of Physics and Measurement Technology, Linköping University, Linköping, Sweden
2: Department of Electrical Engineering and Computer Science, University of Southampton, Southampton, UK
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Affiliations:
1: Department of Physics and Measurement Technology, Linköping University, Linköping, Sweden
- Source:
Volume 29, Issue 8,
15 April 1993,
p.
671 – 673
DOI: 10.1049/el:19930450 , Print ISSN 0013-5194, Online ISSN 1350-911X
The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2μm and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7–4.8 V.
Inspec keywords: elemental semiconductors; semiconductor doping; antimony; silicon; semiconductor growth; Schottky gate field effect transistors; molecular beam epitaxial growth
Other keywords:
Subjects: Semiconductor doping; Epitaxial growth; Other field effect devices
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