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Fabrication and performances of delta-doped Si n-MESFET grown by MBE

Fabrication and performances of delta-doped Si n-MESFET grown by MBE

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The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2μm and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7–4.8 V.

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