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High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

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InP/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7 × 1019/cm3. To our knowledge, this is the highest doping level reported using carbon. HBTs with 20 Å spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BVCEO were 7 and 6 V, respectively.

Inspec keywords: heterojunction bipolar transistors; III-V semiconductors; carbon; gallium arsenide; indium compounds; heavily doped semiconductors; semiconductor growth; chemical beam epitaxial growth; semiconductor doping

Other keywords: highly doped base; breakdown voltage; current gain; 6 V; Gummel plot; ideal I-V characteristics; hole concentration; doping level; HBTs; base current ideality factor; heterojunction bipolar transistors; chemical beam epitaxy; InP-In0.53Ga0.47As:C; collector current ideality factor

Subjects: Semiconductor doping; Epitaxial growth; Bipolar transistors

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