High responsivity 1.3 μm transceiver module for low cost optical half-duplex transmission

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High responsivity 1.3 μm transceiver module for low cost optical half-duplex transmission

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© The Institution of Electrical Engineers
Published

A pigtailed transceiver module which exhibits a record responsivity of 0.5 A/W is described. A single laser chip of Fabry–Perot type V-on-U-groove (VUG) laser is packed in a butterfly type package. By improving the fibre-chip coupling, a responsivity as high as 0.5 A/W is demonstrated together with a bandwidth of 1.5 GHz. The power penalty, compared with that of a pin photodiode within the same experimental configuration, is only 1.2 dB at 800 Mbit/s.

Inspec keywords: packaging; semiconductor lasers; optical communication equipment; modules; transceivers; laser beam applications; digital communication systems

Other keywords: 1.3 micron; butterfly type package; fibre-chip coupling; laser chip; pigtailed type; Fabry-Perot type; optical half-duplex transmission; 1.5 GHz; transceiver module; V-on-U-groove; 800 Mbit/s

Subjects: Optoelectronics manufacturing; Product packaging; Optical communication; Packaging; Laser applications; Semiconductor lasers

References

    1. 1)
      • A. Alping , R. Tell , S.T. Eng . Photodetection properties of semiconductor laser diode detectors. J. Lightwave Technol. , 1662 - 1668
    2. 2)
      • Semo, I., Bouadma, N., Nakajima, H., Abiven, J., Bourgart, F.: `700 Mb/s 1.3 μm module for low cost optical half-duplex transmission', Proc. OPTO '92, 1992, Paris, France, p. 246–249.
    3. 3)
      • J.P. van der Ziel . Characteristics of 1.3-μm InGaAsP lasers used as photodetectors. J. Lightwave Technol. , 347 - 352
    4. 4)
      • C. Kazmierski , D. Robein , D. Mathoorasing . (1992) 2pS-RC product new SI-BH laser structure so far over 20 GHz operation, SPIE.
    5. 5)
      • Krakowski, M., Combemale, Y., Renaud, J.C., Rondi, D., Blondeau, R., D'Auria, L.: `High frequency operation of laser diodes on semi-insulating InP substrate for half-duplex optical links', Proc. ECOC '92, 1992, Berlin, FRG, 3, p. 891–894.
    6. 6)
      • A. Alping , B. Bentland , S.T. Eng . 100 Mbit/s laser diode terminal with optical gain for fibre-optic local area network. Electron. Lett. , 794 - 795
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