Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers

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Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers

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© The Institution of Electrical Engineers
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Measurements are reported of intervalence band absorption (IVBA) coefficient k0 in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells. The IVBA measurements are performed by observing the spontaneous emission from the uncleaved facets of DCPBH Fabry-Perot lasers. k0 = (3.7 ± 0.3) × 10−17 cm2 is obtained for bulk, (1.4 ± 0.2) × 10−16 cm2 for MQW unstrained and (3.5 ± 0.3) × 10−17 cm2 for strained MQW structures.

Inspec keywords: laser variables measurement; semiconductor lasers; laser transitions

Other keywords: spontaneous emission; absorption coefficient measurements; double channel; DC-PBH; 1.55 micron; DCPBH Fabry-Perot lasers; unstrained MQW; intervalence band; multiquantum well; semiconductor lasers; strained MQW structures; planar buried heterostructure; bulk layer; uncleaved facets; active layer structure

Subjects: Lasing action in semiconductors; Semiconductor lasers

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