GeMoW refractory ohmic contacts to n-type GaAs with In0.5Ga0.5As cap layer
GeMoW refractory ohmic contacts to n-type GaAs with In0.5Ga0.5As cap layer
- Author(s): K.G. Merkel ; V.M. Bright ; S.N. Schauer ; C.I. Huang ; G.D. Robinson
- DOI: 10.1049/el:19930321
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- Author(s): K.G. Merkel 1 ; V.M. Bright 1 ; S.N. Schauer 2 ; C.I. Huang 3 ; G.D. Robinson 3
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View affiliations
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Affiliations:
1: Department of Electrical and Computer Engineering, US Air Force Institute of Technology, Dayton, USA
2: Electronic Technology and Development Laboratory, US Army, Fort Monmouth, USA
3: Wright Laboratory, Solid State Electronics Directorate, US Air Force, Dayton, USA
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Affiliations:
1: Department of Electrical and Computer Engineering, US Air Force Institute of Technology, Dayton, USA
- Source:
Volume 29, Issue 5,
4 March 1993,
p.
480 – 481
DOI: 10.1049/el:19930321 , Print ISSN 0013-5194, Online ISSN 1350-911X
GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700°C. A minimum contact resistance of 0.176 Ω mm was obtained following furnace annealing at 500°C.
Inspec keywords: indium compounds; molybdenum alloys; ohmic contacts; gallium arsenide; tungsten alloys; germanium alloys; semiconductor-metal boundaries; annealing; III-V semiconductors; contact resistance
Other keywords:
Subjects: Contact resistance, contact potential, and work functions; Electrical properties of metal-nonmetal contacts; Semiconductor-metal interfaces
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