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GeMoW refractory ohmic contacts to n-type GaAs with In0.5Ga0.5As cap layer

GeMoW refractory ohmic contacts to n-type GaAs with In0.5Ga0.5As cap layer

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GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700°C. A minimum contact resistance of 0.176 Ω mm was obtained following furnace annealing at 500°C.

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