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Residual stress effect on electron mobility in ZMR-SOI

Residual stress effect on electron mobility in ZMR-SOI

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© The Institution of Electrical Engineers
Published

N-channel enhancement-mode MOSFETs have been fabricated in silicon-on-insulator (SOI) films prepared by both infra-red and laser zone-melting recrystallisation (ZMR). The SOI films are subjected to a lateral tensile stress due to the thermal expansion coefficient difference between silicon and silicon dioxide. The devices in the stressed films exhibit higher surface electron mobilities than those in bulk single crystal silicon. This phenomenon has been attributed to the influence of the stress through the change of the band structure as well as redistribution of carriers in k⃗ space.

Inspec keywords: zone melting; elemental semiconductors; semiconductor thin films; semiconductor-insulator boundaries; silicon; recrystallisation; insulated gate field effect transistors; thermal expansion; stress effects; carrier mobility

Other keywords: band structure; carrier-redistribution; Si-SiO2; laser zone-melting recrystallisation; electron mobility; enhancement-mode; thermal expansion coefficient; ZMR-SOI; MOSFETs; IR ZMR; TCE difference; lateral tensile stress; n-channel device; surface electron mobilities; stressed films

Subjects: Electrical conductivity of elemental semiconductors; Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Insulated gate field effect transistors; Electronic properties of semiconductor thin films

References

    1. 1)
      • J.C.C. Fan , B.-Y. Tsaur , M.W. Geis . Graphite-strip-heater zone-melting-recrystallization of Si films. J. Cryst. Growth , 453 - 483
    2. 2)
      • A. Gat , L. Gerzberg , J.F. Gibbons , T.J. Magee , P. Peng , J.D. Hong . CW laser anneal of polycrystalline silicon: crystalline structure, electrical properties. Appl. Phys. Lett. , 8 - 11
    3. 3)
      • L.J. Liu , P.H. Tsien , Z.J. Li . Defect-free silicon film on SiO2 formed by zone melting recrystallisation with high scanning speed. IEEE Trans. , 952 - 957
    4. 4)
      • X.J. Yang , T.G. Ma , J.S. Zhang , P.H. Tsien . Study of laser recrystallization of silicon on insulator (SOI) with antireflective stripe. Chinese J. Semicond. , 111 - 117
    5. 5)
      • R.A. Smith . (1969) , Wave mechanics of crystalline solids.
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