Non-volatile memory characteristics of submicrometre Hall structures fabricated in epitaxial ferromagnetic MnAl films on GaAs

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Non-volatile memory characteristics of submicrometre Hall structures fabricated in epitaxial ferromagnetic MnAl films on GaAs

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© The Institution of Electrical Engineers
Published

Hall-effect structures with submicrometre linewidths (<0.3 μm) have been fabricated in ferromagnetic thin films of Mn0.60A0.40 which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information.

Inspec keywords: molecular beam epitaxial growth; ferromagnetic properties of substances; manganese alloys; magnetic epitaxial layers; Hall effect devices; ferromagnetism; aluminium alloys; magnetic film stores; magnetic hysteresis; gallium arsenide

Other keywords: epitaxial ferromagnetic MnAl films; electrically addressable; GaAs substrate; nonvolatile storage; 0.3 micron; square hysteretic behaviour; submicron linewidths; submicrometre hall structures; stable readout states; digital information; non-volatile storage; Mn0.6Al0.4-GaAs; perpendicular remanent magnetisation

Subjects: Epitaxial growth; Magnetic thin film devices; Ferromagnetic materials; Storage on stationary magnetic media

References

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