© The Institution of Electrical Engineers
A single-electron memory cell, in which one bit of information is represented by +n and −n electron number states, is described. An experimental memory circuit for n ≃100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930258
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