Single-electron memory
Single-electron memory
- Author(s): K. Nakazato ; R.J. Blaikie ; J.R.A. Cleaver ; H. Ahmed
- DOI: 10.1049/el:19930258
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- Author(s): K. Nakazato 1 ; R.J. Blaikie 1 ; J.R.A. Cleaver 2 ; H. Ahmed 2
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View affiliations
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Affiliations:
1: Hitachi Cambridge Laboratory, Cavendish Laboratory, Hitachi Europe Ltd., Cambridge, UK
2: Cavendish Laboratory, Microelectronics Research Centre, Cambridge, UK
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Affiliations:
1: Hitachi Cambridge Laboratory, Cavendish Laboratory, Hitachi Europe Ltd., Cambridge, UK
- Source:
Volume 29, Issue 4,
18 February 1993,
p.
384 – 385
DOI: 10.1049/el:19930258 , Print ISSN 0013-5194, Online ISSN 1350-911X
A single-electron memory cell, in which one bit of information is represented by +n and −n electron number states, is described. An experimental memory circuit for n ≃100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.
Inspec keywords: semiconductor storage; integrated memory circuits; tunnelling
Other keywords:
Subjects: Memory circuits; Semiconductor storage
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