Single-electron memory
Single-electron memory
- Author(s): K. Nakazato ; R.J. Blaikie ; J.R.A. Cleaver ; H. Ahmed
- DOI: 10.1049/el:19930258
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- Author(s): K. Nakazato 1 ; R.J. Blaikie 1 ; J.R.A. Cleaver 2 ; H. Ahmed 2
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View affiliations
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Affiliations:
1: Hitachi Cambridge Laboratory, Cavendish Laboratory, Hitachi Europe Ltd., Cambridge, UK
2: Cavendish Laboratory, Microelectronics Research Centre, Cambridge, UK
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Affiliations:
1: Hitachi Cambridge Laboratory, Cavendish Laboratory, Hitachi Europe Ltd., Cambridge, UK
- Source:
Volume 29, Issue 4,
18 February 1993,
p.
384 – 385
DOI: 10.1049/el:19930258 , Print ISSN 0013-5194, Online ISSN 1350-911X
A single-electron memory cell, in which one bit of information is represented by +n and −n electron number states, is described. An experimental memory circuit for n ≃100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.
Inspec keywords: semiconductor storage; integrated memory circuits; tunnelling
Other keywords:
Subjects: Memory circuits; Semiconductor storage
References
-
-
1)
- D.V. Averin , K.K. Likharev , B.L. Altshuler , P.A. Lee , R.A. Webb . (1991) Single electronics: A correlated transfer of single electrons and Cooperpairs in systems of small tunnel junctions, Mesoscopic phenomena in solids.
-
2)
- K. Nakazato , T.J. Thornton , J. White , H. Ahmed . Single-electron effects in a point contact using side-gating in delta-doped layers. Appl. Phys. Lett. , 3145 - 3147
-
3)
- C.J. Gorter . A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strength. Physica , 777 - 780
-
4)
- D.V. Averin , K.K. Likharev , H. Grabert , M.H. Devoret . (1992) Possible applications of single charge tunneling, Single charge tunneling.
-
5)
- P. Lafarge , H. Pothier , E.R. Williams , D. Esteve , C. Urbina , M.H. Devoret . Direct observation of macroscopic charge quantization. Z. Phys. B—Condensed Matter , 327 - 332
-
6)
- T.A. Fulton , G.J. Dolan . Observation of single-electron charging effects in small tunnel junctions. Phys. Rev. Lett. , 109 - 112
-
7)
- L.J. Geerligs , V.F. Anderegg , P.A.M. Holweg , J.E. Mooij , H. Pothier , D. Esteve , C. Urbina , M.H. Devoret . Frequency-locked turnstile device for single electrons. Phys. Rev. Lett. , 2691 - 2694
-
1)