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Diffusion of delta doped boron in silicon following oxidation

Diffusion of delta doped boron in silicon following oxidation

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  • Author(s): A.G. O'Neill 1 ; R.D. Barlow 2 ; R.G. Biswas 2 ; P.J. Phillips 2 ; S. Taylor 3 ; A. Gundlach 4
    • View affiliations
    • Affiliations: 1: Department of Electrical and Electronic Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne, UK
      2: Department of Physics, University of Warwick, Coventry, UK
      3: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK
      4: Department of Electrical Engineering, University of Edinburgh, Edinburgh, UK
  • Source: Volume 29, Issue 3, 4 February 1993, p. 263 – 264
    DOI:  10.1049/el:19930180 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published

Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.

Inspec keywords: doping profiles; silicon; rapid thermal processing; elemental semiconductors; boron; oxidation

Other keywords: oxidation enhanced diffusion; plasma oxidation; Si:B doped delta layer; Si wafers; low temperature processing; B diffusion; semiconductors; activation anneal; rapid thermal processing; Si:B; RTP

Subjects: Semiconductor doping; Surface treatment (semiconductor technology)

References

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